Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry

نویسندگان

  • G. Laurence
  • F. Hottier
  • J. Hallais
چکیده

2014 Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of GaAs-(Al, Ga)As structure growth : qualitative assessment in real-time and quantitative assessment (growth rate, composition determination and transition width) by experimental data processing after growth. Revue Phys. Appl. 16 (1981) 579-589 OCTOBRE 1981, PAGE

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تاریخ انتشار 2016